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STP11NC40, STP11NC40FP
N-CHANNEL 400V - 0.44 - 9.5A TO-220/TO-220FP PowerMESHTMII Power MOSFET
TYPE STP11NC40 STP11NC40FP
s s s s s
VDSS 400 V 400 V
RDS(on) < 0.55 < 0.55
ID 9.5 A 9.5 A(*)
Pw 120 W 30 W
TYPICAL RDS(on) = 0.44 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
TO-220
3 1 2
TO-220FP
DESCRIPTION The PowerMESHTMII is the evolution of the first generation of MESH OVERLAYTM. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER
s
ORDERING INFORMATION
SALES TYPE STP11NC40 STP11NC40FP MARKING P11NC40 P11NC40FP PACKAGE TO-220 TO-220FP PACKAGING TUBE TUBE
January 2002
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STP11NC40, STP11NC40FP
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) VISO Tj Tstg Parameter
STP11NC40
Value
STP11NC40FP
Unit V V V 9.5 (*) 6 (*) 38 (*) 30 0.24 A A A W W/C V/ns 2500 V C C
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 9.5 6 38 120 0.96
400 400 30
3.5
-55 to 150 -55 to 150
(l) Pulse width limited by safe operating area (1) I SD 9.5A, di/dt 100A/s, VDD V(BR)DSS, T j TJMAX. (*) Limited only by maximum temperature allowed
THERMAL DATA
TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.04 62.5 300 TO-220FP 4.1 C/W C/W C
AVALANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 9.5 300 Unit A mJ
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) ON/OFF
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 30V VDS = VGS, ID = 250A VGS = 10V, ID = 5 A 2 3 0.44 Min. 400 1 50 100 4 0.55 Typ. Max. Unit V A A nA V
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STP11NC40, STP11NC40FP
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) DYNAMIC
Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 15 V, ID = 5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 8.6 995 172 25 Max. Unit S pF pF pF
SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Test Conditions VDD = 200 V, ID = 5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 320V, ID = 10 A, VGS = 10V Min. Typ. 15 18 32.5 6 15 45.5 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol td(off) tf tr(Voff) tf tc Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 320 V, ID = 5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 320V, ID = 10 A, RG = 4.7, VGS = 10V (Inductive Load see, Figure 5) Min. Typ. 43 15 7.5 14 23 Max. Unit ns ns ns ns ns
SOURCE DRAIN DIODE
Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 9.5 A, VGS = 0 ISD = 9.5 A, di/dt = 100A/s VDD = 100V, Tj = 150C (see test circuit, Figure 5) 315 2100 13.6 Test Conditions Min. Typ. Max. 9.5 38 1.6 Unit A A V ns nC A
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
Safe Operating Area For TO-220
Safe Operating Area For TO-220FP
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Thermal Impedance For TO-220 Thermal Impedance For TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
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Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized Gate Threshold Voltage Temperature vs
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
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STP11NC40, STP11NC40FP
Maximum Avalanche Energy vs Temperature Id vs Temperature
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STP11NC40, STP11NC40FP
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
A
C
D1
L2
D
F1
G1
E
Dia. L5 L7 L6 L4
P011C
L9
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F2
F
G
H2
STP11NC40, STP11NC40FP
TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O
A
B
L3 L6 L7
F1 F
D
G1 H
F2
L2 L5
E
123
L4
G
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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